L-81XXIR4X – 8.0mm Infrared Emitting Diode

L-81XXIR4X - 8.0mm Infrared Emitting Diode


• Absolute Maximum Rating : (Ta=25°C) •
Part No. PD(mw) VR(V) Topr Tstg
L-81XXIR4X 240 5 -35°C to 85°C -35°C to 85°C
PARAMETER Power Dissipation Reverse Voltage Operating Temperature Range Storage Temperature Range
Lead Soldering Temperature{1.6mm(0.063 inch) From Body}250°C ± 5°C for 3 Seconds
• Electro-Optical Characteristics : (Ta=25°C) •
Test Condition IF=20mA
IF=100mA
VR=5V IF=20mA IF=20mA IF=20mA Data Sheet
Part No. VF(V) IR (µA ) λp(nm) 2θ 1/2 (dge) le(mw/sr)
Typ. Max. Max. Typ. Typ. Typ.
L-814EIR4C 1.4
1.5
1.6
1.8
10 850 20 80
L-818EIR4C 1.4
1.5
1.6
1.8
10 850 40 20
• Electro-Optical Characteristics : (Ta=25°C) •
Test Condition IF=50mA
IF=100mA
VR=5V IF=50mA IF=50mA IF=50mA Data Sheet
Part No. VF(V) IR (µA ) λp(nm) 2θ 1/2 (dge) le(mw/sr)
Typ. Max. Max. Typ. Typ. Typ.
L-816EIR4C 1.4
1.7
1.8
2.0
10 850 28 33
L-81AEIR4C 1.4
1.7
1.8
2.0
10 850 50 80

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